Evaluation of 1.2 kV SiC MOSFETs in Multilevel Cascaded H-bridge Three-phase Inverter for Medium-voltage Grid Applications

Abstract

Abstract: A study is conducted to evaluate 1.2 kV silicon-carbide (SiC) MOSFETs in a cascaded H-bridge (CHB) three-phase inverter for medium-voltage applications. The main purpose of this topology is to remove the need for a bulky 60 Hz transformer normally used to step up the output signal of a voltage source inverter to a medium-voltage level. Using SiC devices (1.2-6.5 kV SiC MOSFETs) which have a high breakdown voltage, enables the system to meet and withstand the medium-voltage stress using only a minimal number of cascaded modules. The SiC-based power electronics when used in the presented topology considerably reduce the complexity usually encountered when Si devices are used to meet the medium-voltage level and power scalability. Simulation and preliminary experimental results on a low-voltage prototype verifies the nine-level CHB topology presented in this study.

Key words: SiC switching devices, cascaded h-bridge inverter, medium voltage AC grid, energy storage

Haider Mhiesan, Janviere Umuhoza, Kenneth Mordi, Chris Farnell, H. Alan Mantooth. Evaluation of 1.2 kV SiC MOSFETs in Multilevel Cascaded H-bridge Three-phase Inverter for Medium-voltage Grid Applications[J]. Chinese Journal of Electrical Engineering, 2019, 5(2): 1-13.

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