Chinese Journal of Electrical Engineering ›› 2018, Vol. 4 ›› Issue (4): 57-63.

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Study of Pressure Balance for Press-Pack IGBTs and Its Influence on Temperature Distribution

Zihao Zhao1,2, Lin Liang1,*, Lubin Han1   

  1. 1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
    2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
  • Online:2018-12-25 Published:2019-10-31
  • Contact: *Email: lianglin@hust.edu.cn.
  • About author:Zihao Zhao received the B.S. degree in Optical and Electrical Information Engineering from Huazhong University of Science and Technology, Wuhan, China, in 2016. He is currently working towards the M.S. degree in Software Engineering at Huazhong University of Science and Technology. His research interests include modeling and packaging for power electronic modules. Lin Liang received the B.S and PhD degrees in Electronic Science and Technology from Huazhong University of Science and Technology, Wuhan, China, in 2003 and 2008 respectively. She has been the Associate Professor at Huazhong University of Science and Technology since 2011. She has been the Visiting professor at FREEDM System Center in North Carolina State University from 2014 to 2015. Her research spans modeling, optimization, process, packaging and application of power semiconductor devices. Lubin Han received the B.S. degree in Electrical Engineering and Automation from China University of Petroleum, Qingdao, China, in 2017. He is currently working towards the Ph.D. degree in Electrical Engineering at Huazhong University of Science and Technology. His research interests include modeling, packaging and characterization for power semiconductor devices.

Abstract: Pressure balance is a key technology for Press-Pack IGBT packaging, and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on. By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software, the influence of the internal flatness condition on the pressure balance is analyzed, and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained. The thermal contact resistance and the electrical contact resistance parameters, which are dependent on the pressure, are then imported to perform the multi-field coupling, further investigating the effect of different pressure distributions on temperature distribution. The junction-case thermal resistance of the device with different flatness is compared experimentally. The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device.

Key words: Press-Pack IGBT, pressure balance, temperature distribution, thermal resistance