CJEE

Chinese Journal of Electrical Engineering ›› 2019, Vol. 5 ›› Issue (3): 30-41.doi: 10.23919/CJEE.2019.000018

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Impact of Non-ideal Waveforms on GaN Power FET in Magnetic Resonant Wireless Power Transfer System*

Shizhen Huang1, Jianshan Zhang1,2,*, Wengang Wu2, Ling Xia3   

  1. 1. College of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, China;
    2. Institute of Microelectronics, Peking University, Beijing 100871, China;
    3. Shenzhen Hai Li Tech, Inc., Shenzhen 518129, China
  • Online:2019-09-25 Published:2019-12-20
  • Contact: * Email: jszhang1994@163.com.
  • About author:Shizhen Huang received his B.S., M.S., and Ph.D. degrees in electrical engineering from Fuzhou University, Fuzhou, China, in 1990, 2001, and 2010, respectively. He successively served as director of the "Fujian Key Laboratory of Microelectronics and Integrated Circuit" and deputy director of the "Fujian Integrated Circuit Design Center".He has presided over or participated in more than ten scientific research projects, such as "related electrochemical problems in the metallization process of semiconductor chips," "CMOS 90nm distributed amplifier of monolithic integrated circuit," and "design and process research of nanometer gas-sensitive chips." His current research interests include power electronic devices, nanomaterials, and integrated circuits.He has published more than 90 academic papers and now is working in Fuzhou university as a senior engineer and associate researcher.Jianshan Zhang received his B.S. degree in electrical engineering from Jimei University, Xiamen, China, in 2017. Since 2017, he has been working toward the M.S. degree in the College of Physics and Information Engineering, Fuzhou University, Fuzhou, China. He has been studying in Peking University, Beijing, China, since 2018 through joint training between schools. His current research interests include the design and testing of wireless power transfer (WPT) systems, gallium nitride (GaN), power electronic devices, and applications.Wengang Wu received his B.S. and Ph.D. degrees in electrical engineering respectively from Fudan University, Shanghai, China, and Xi’an Jiaotong University (XJTU), Xi’an, China. From 1995 to 1997, he worked as a postdoctoral fellow at the Institute of Semiconductors, Chinese Academy of Sciences. From 1997 to 2000, he studied abroad at the University of California, Los Angeles (UCLA) and became a postdoctoral researcher.His major scientific research works include: preparation of quantum dot superlattices of Si/Ge and III-V group materials; design, fabrication, characteristic tests, and simulation research of high frequency high-power AlGaN/GaN high electron mobility transistors (HEMT) and amplifiers. His current research interests include gallium nitride (GaN) power electronic devices and micro/nano electromechanical systems (MEMS/NEMS) technology.He has published more than 80 research papers in first-class international academic journals, domestic core academic journals, and international important academic conferences. He is now doctoral professor, supervisor, and deputy director of the MEMS research institute of Peking University.Ling Xia received his B.S. and M.S. degrees from Peking University in 2003 and 2006, respectively, and the PhD degree from Massachusetts Institute of Technology in 2012, all in electrical engineering. He has more than 10 years of experience in compound semiconductor devices and has authored over 20 papers and 10 patents in this field. From 2012 to 2013, he was a senior engineer at MACOM technology solutions, Inc. From 2013 to 2018, he was with Cambridge Electronics, Inc. working on GaN power electronics. His current research interests include III-V devices for advanced RF and power-electronics applications.

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Abstract: GaN field-effect transistors (FET) have low conduction and switching losses in high-frequency (>MHz) resonant wireless power transfer systems. Nevertheless, such systems impose a unique stress on GaN FETs owing to their non-ideal voltage waveforms. In this work, we report the observed non-ideal behavior in a 6.78 MHz magnetic resonant wireless transfer system that employs class-D GaN power amplifiers. The non-ideal waveform phenomenon existing at the output of the power amplifier is explained. The study analyzes the causes of this phenomenon, including the coupling coefficient k of the coil, the DC input voltage of the amplifier, and the load on the receiver. Each parameter is simulated and analyzed using LTspice. The influence of the phenomenon on the on-state resistance of the GaN device is proved in an experimental measurement, and the cause of the phenomenon is explained. The study combines a theoretical simulation and an experimental test to discuss the effect of this phenomenon on GaN power devices and proposes the corresponding solutions, which include the limitation of voltage, current, and power of the system, thermal management, and other protection measures.

Key words: GaN, wireless power transfer, non-ideal waveform, simulation, verification