A Finite Difference Method Modeling for IGBT and Diode in PSPICE

Chinese Journal of Electrical Engineering ›› 2017, Vol. 3 ›› Issue (3): 85-93.

A Finite Difference Method Modeling for IGBT and Diode in PSPICE

Jinlei Meng¹, Puqi Ning^2,3,4,*, Xuhui Wen^2,3,4, Lei Li^2,3,4

1. Corporate Research Center, ABB (China) Ltd, Beijing, 100015, China;
2. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering Chinese Academy of Sciences, Beijing 100083, China;
3. Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100083, China;
4. University of Chinese Academy of Sciences, Beijing 100049, China

Online:2017-09-25 Published:2019-11-01
Contact: * E-mail: npq@mail.mail.iee.ac.cn.
About author:Jinlei Meng received this Ph.D degree from Institute of Electrical Engineering Chinese Academy of Sciences in 2015. He is now a research staff in Corporate Research Center, ABB (China) Ltd, Beijing. Dr. Meng has been involved in power device modeling and high density converter design for more than 7 years. Puqi Ning received his Ph.D degree from electrical engineering of Virginia Tech, Blacksburg, US in 2010. He is full professor in Institute of Electrical Engineering, Chinese Academy of Sciences. Dr. Ning has been involved in high temperature packaging and high density converter design for more than 10 years. Xuhui Wen received her B.S, M.S and PhD degree in electrical engineering from Tsinghua University in 1984, 1989, 1993 respectively. She is full professor in Institute of Electrical Engineering, Chinese Academy of Sciences. Dr. Wen has been involved in high power density electrical drive and generation especially for electric vehicle application for more than 20 years. Lei Li is a PhD student in Institute of Electrical Engineering, Chinese Academy of Sciences. He has been involved in power device modeling and high density converter design for 3 years.

Abstract

Abstract: In this paper, a novel modeling approach for both PiN diode and IGBT is presented. In this model, the carrier diffusion equation, which retains the distributed nature of charge dynamics in bipolar power devices, is solved directly by finite difference method in PSPICE. The physical basis of this model and some practical considerations are introduced. Compared with conventional Fourier based IGBT model, the presented model keeps higher simulation speed and comparable high accuracy. These features were also verified by simulations and experiments.

Key words: Physical based model, finite difference method, IGBT model, diode model

Jinlei Meng, Puqi Ning, Xuhui Wen, Lei Li. A Finite Difference Method Modeling for IGBT and Diode in PSPICE[J]. Chinese Journal of Electrical Engineering, 2017, 3(3): 85-93.

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