Design and Optimization of a GaN GIT Based PFC Boost Converter

Chinese Journal of Electrical Engineering ›› 2017, Vol. 3 ›› Issue (3): 34-43.

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Design and Optimization of a GaN GIT Based PFC Boost Converter

Wenbo Wang^*, Frans Pansier, Jelena Popovic, J. A. Ferreira

Delft University of Technology, Delft, The Netherlands

Online:2017-09-25 Published:2019-11-01
Contact: * E-mail:w.b.wang@bd-iist.com.
About author:Wenbo Wang (S’13) received the B.Sc. degree in electrical engineering and automation, and the M.Sc. degree in power electronics and electrical drives from Northwestern Polytechnical University, Xi’an, China, in 2008 and 2010, respectively. He is currently working toward the Ph.D. degree in electrical machines from Delft University of Technology, Delft, The Netherlands. His current research interests include characterization and application of wide bandgap semiconductors and design and implementation of high frequency converters. Frans Pansier received his M.Sc. in Electronic Engineering at Technical University Delft in 1980. He joined Philips Consumer Electronics for development of magnetic components and power supplies for various applications. From 2006–2014 het worked at NXP for developing new controllers for power supplies. Since 2014 he is researcher and lecturer in Advanced Power Electronics at TUDelft. His main interests are off line power supplies with increased efficiency over all load conditions. This includes the optimal use of all components, incl. high frequency operation, EMI reduction and reliability. He holds over 30 patents. Jelena Popović (S’04-M’05) received the Dipl.Ing. degree from the University of Belgrade, Serbia, in 2001. She received the Ph.D. degree from the Delft University of Technology, Delft, The Netherlands in 2005. From 2005 to 2011 she was with European Center for Power Electronics (ECPE), as a Technology Transfer Coordinator for one of the ECPE flagship programs and working on various strategic activities related to power electronics enabled energy efficiency. Since 2008 she has been with the Delft University of Technology as an Assistant Professor in Power Electronics, from 2017 as a guest researcher. Her research interests include packaging and integration in power electronics, wide band gap power electronics and off-grid rural electrification. Jan Abraham Ferreira (M’88–SM’01–F’05) received the Ph.D. degree in electrical engineering from the Rand Afrikaans University, Johannesburg, South Africa, in 1988. In 1981, he did research on battery vehicles at the Institute of Power Electronics and Electric Drives, Technical University of Aachen, Aachen, Germany, and worked in industry as a Systems Engineer with ESD (Pty) Ltd., Cloverdale, WA, Australia, from 1982 to 1985. From 1986 to 1997, he was with the Faculty of Engineering, Rand Afrikaans University, where he held the Carl and Emily Fuchs Chair of Power Electronics in later years. In 1998, he became a Professor of Power Electronics and Electrical Machines with the Delft University of Technology, Delft, The Netherlands. Dr. Ferreira was a Chairman of the South African Section of the IEEE from 1993 to 1994. He is the Founding Chairman of the IEEE Joint IAS/PELS Benelux chapter. He served as the Chairman of the IEEE IAS Power Electronic Devices and Components Committee from 1995 to 1996. He served as an Associate Editor of the PELS Transactions, PELS Treasurer, and VP-Meetings. He was the Chairman of the CIGRE SC14 National Committee of the Netherlands from 1999 to 2002 and a member of the Executive Committee of the European Power Electronic Association EPE Society (1999–2003; 2008–2011). He was the president of the IEEE Power Electronics Society (PELS) from 2014 to 2016 and is the immediate-past president of PELS.

Abstract

Abstract: The advent of GaN power devices brings the possibility of pushing up frequencies of power electronics system beyond the capacity of conventional Si counterparts. To harvest the high frequency operation benefits of GaN technology, not only GaN devices should be used optimally by providing proper switching and conduction conditions to best accommodate parasitic elements inherent with the devices, other components should also be capable of facilitating high frequency operation. In this paper, PFC boost converter is used as a platform to harvest the benefits of GaN technology and, at the same time, to uncover the limitations in pushing power electronics systems up. A 600W PFC boost converter with a maximum switching frequency of 3MHz is designed and implemented, which reached an average efficiency of 98.5%. The results indicate that, when properly used, a GaN PFC boost converter could operate at a frequency that is beyond the reach of conventional Si ones. As well, with availability of GaN devices, high frequency operation of power electronics systems is no longer limited by the lack of switching devices but by practical issues e.g. high frequency magnetic materials, high frequency controllers, etc.

Key words: GaN GIT, boost converter, PFC, high frequency, design, optimization

Wenbo Wang, Frans Pansier, Jelena Popovic, J. A. Ferreira. Design and Optimization of a GaN GIT Based PFC Boost Converter[J]. Chinese Journal of Electrical Engineering, 2017, 3(3): 34-43.

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Design and Optimization of a GaN GIT Based PFC Boost Converter

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