Chinese Journal of Electrical Engineering ›› 2016, Vol. 2 ›› Issue (1): 91-100.
Yifei Luo, Fei Xiao*, Bo Wang, and Binli Liu
Online:
2016-01-20
Published:
2019-10-31
Contact:
* , E-mail: xfeyninger@qq.com.
About author:
Yifei Luo received the B.S. and M.S. degrees in electrical engineering from Huazhong University of Science and Technology, Wuhan, China, in 2002 and 2005, respectively, and the Ph.D. degree in electrical engineering from University of New Hampshire, NH, U.S., in 2010. From 2010 to 2011, he was a Senior Engineer in LSI Corporation in U.S. In 2011, he was a Lecturer in Naval University of Engineering, where he was an Associate Professor in 2014. His research interests include power semiconductor device modelling, power electronic device reliability and power converter reliability. Supported by:
Yifei Luo, Fei Xiao, Bo Wang, and Binli Liu. Failure Analysis of Power Electronic Devices and Their Applications under Extreme Conditions[J]. Chinese Journal of Electrical Engineering, 2016, 2(1): 91-100.
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[1] Z. Chen, J. M. Guerrero, and F. Blaabjerg, “A review of the state of the art of power electronics for wind turbines,” IEEE Trans. Power Electron., vol. 24, no. 8, pp. 1859-1875, Aug. 2009. [2] Y. L. Xiong, X. Cheng, and Z. J. Shen, “Prognostic and warning system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles,” IEEE Trans. Ind. Electron., vol. 55, no. 6, pp. 2268-2276, Jun. 2008. [3] H. Wang, M. Liserre, and F. Blaabjerg, “Toward reliable power electronics - challenges, design tools and opportunities,” IEEE Industrial Electronics Magazine, vol. 7, no. 2, pp. 17-26, Jun. 2013. [4] A. D. Touboul, L. Foro, and F. Wrobel, "On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum," Microelectronics Reliability, vol. 52, pp. 124-129, 2012. [5] M. Ciappa, and P. Malberti, “Plastic-strain of aluminum interconnections during pulsed operation of IGBT multichip modules,” Int. Qual. Reliab. Eng. 1996, 12, pp. 297-303. [6] P. Malberti, M. Ciappa, and R. Cattomio, “A power-cycling induced failure mechanism of IGBT multichip modules,” Int. Symp. Testing Failure Anal. 1995, 21, pp. 163-168. [7] G. Mitic, R. Beinert, P. Klofac, “Reliability of AlN substrates and their solder joints in IGBT power modules,” Microelectron. Reliab. vol. 39, pp. 1159-1164, 1999. [8] M. Bouarroud, Z. Khatir, J. P. Ousten, and S. Lefebvre, “Temperaturelevel effect on solder lifetime during thermal cycling of power modules,” IEEE Trans. Device Mater. Rel., vol. 8, no. 3, pp. 471-477, Sep. 2008. [9] Z. Khatir, J. P. Ousten, F. Badel, "Degradation behavior of 600V-200A IGBT modules under power cycling and high temperature environment conditions," Microelectron. Reliab., vol. 47, no. 9-11, pp. 1719-1724, 2007. [10] B. Czerny, M. Lederer, B. Nagl, “Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions,” Microelectron. Reliab. vol. 52, pp. 2353-2357, 2012. [11] J. A. Sayago, T. Brückner, and S. Bernet, "How to select the system voltage of MV drives-A comparison of semiconductor expenses," IEEE Trans. Ind. Electron., vol. 55, no. 9, pp. 3381-3390, Sep. 2008. [12] L. Takata, “Destruction mechanism of PT and NPT-IGBTs in the short circuit operation--an estimation from the quasistationary simulations,” International symposium on power semiconductor devices conference, 4-7 June, 2001, pp. 327- 330. [13] M. Trivedi, “Failure mechanisms of IGBTs under shortcircuit and clamped inductive switching stress,” IEEE Trans. on Power Electron. vol. 14, no. 1, pp. 108–116, 1999. [14] M. Ishiko, “Investigation of IGBT turn-on failure under high applied voltage operation,” Microelectron. Reliab. vol.44, no. 9-11, pp. 1431-1436, 2004. [15] A. Benmansour, "Failure mechanism of trench IGBT under shortcircuit after turn-off," Microelectron. Reliab. vol. 46, no. 9-11, pp. 1778-1783, 2006. [16] W. S. Loh, “Wire bond reliability for power electronic modules - effect of bonding temperature, thermal, mechanical and multi-physics simulation experiments,” Microelectronics and Micro-Systems, EuroSime 2007. [17] M. Ishiko, "Design concept for wire-bonding reliability improvement by optimizing position in power devices," Microelectron. J. vol. 37, pp. 262-268, 2006. [18] H. Medjahed, P. Vidal, and B. Nogarede, "Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes," Microelectron. Reliab. vol. 52, pp. 1099-1104, 2012. [19] A. Benmansour, S. Azzopardi, J. C. Martin,and E. Woirgard, "Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions," Microelectron. Reliab. vol. 47, pp. 1730-1734, 2007. [20] M. Ishiko, "Investigation of IGBT turn-on failure under high applied voltage operation," Microelectron. Reliab. vol. 44, no. 9-11, pp. 1431-1436, 2004. [21] V. Smet, F. Forest, J. Huselstein, "Ageing and failure modes of IGBT modules in high-temperature power cycling," IEEE Trans. on Ind. Electron. vol. 58, no. 10, pp. 4931-4941, 2011. [22] A. Marco, C. Abraham, T. Didier, "A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system," IEEE Trans. on Ind. Electron. vol. 58, no. 5, pp. 1625-1633, 2011. [23] V. Smet, F. Forest, J. Huselstein, "Evaluation of vce monitoring as a real-time method to estimate aging of bond wire-igbt modules stressed by power cycling," IEEE Trans. on Ind. Electron., vol. 60, no. 7, pp. 2760-2770, Jul. 2013. [24] N. Patil, D. Das, and M. Pecht, "A prognostic approach for non-punch through and field stop IGBTs," Microelectron. Reliab., vol. 52, pp. 482-488, Mar. 2012. [25] R. Bayerer, T. Licht, T. Herrmann, "Model for power cycling lifetime of IGBT modules-Various factors influencing lifetime," The 5th International Conference on Integrated Power System, 2008, pp. 1-6. [26] L. Yang, P. A. Agyakwa, and C. M. Johnson, "Physics-offailure lifetime prediction models for wire bond interconnects in power electronic modules," IEEE Trans. Device Mater. Rel., vol. 13, no. 1, pp. 9-17, Mar. 2013. [27] U. Scheuermann, and R. Schmidt, "A new lifetime model for advanced power modules with sintered chips and optimized Al wire bonds," Proc. PCIM, 2013, pp. 810-817. [28] B. Liu, D. Liu, Y. Tang, "The investigation on the lifetime prediction model of IGBT module," Energy Procedia, 2011 vol. 12, pp. 394-402. [29] A. T. Bryant, P. A. Mawby, P. R. Palmer, et al. "Exploration of power device reliability using compact device models and fast electro-thermal simulation," IEEE Trans. on Ind. Applications, vol. 44, no. 3, pp. 894-903, 2008. [30] A. Testa, S. De Caro, and S. Russo, "A reliability model for power MOSFETs working in avalanche mode based on an experimental temperature distribution analysis," IEEE Trans. Power Electron., vol. 27, no. 6, pp. 3093-3100, Jun. 2012. [31] A. Bryant, S. Y. Yang, P. Mawby, et al., "Investigation into IGBT dV/dt during turn-off and its temperature dependence," IEEE Trans. Power Electron., vol. 26, no. 10, pp. 3019-3031, Oct. 2011. [32] R. Wu, F. Iannuzzo, H. Wang, and F. Blaabjerg, "Electrothermal modeling of high power IGBT module short circuits with experimental validation," Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS), 2015, pp. 1-7. [33] M. Jason, Anderson, and W. C. Robert, "On-line condition monitoring for MOSFET and IGBT switches in digitally controlled drives," Energy Conversion Congress & Exposition, pp. 3920-3927, 2011. [34] K. B. Pedersen, and K. Pedersen, "Dynamic modeling method of electro-thermo-mechanical degradation in IGBT modules," IEEE Trans. on Power Electron., vol. 31, no. 2, pp. 975-986, Jun. 2016. [35] P. Ghimire, K. B. Pedersen, B.Rannestad, "Real mission profile oriented IGBT module wear out test and physics of failure analysis," IEEE Trans. on Power Electron., early access article, 2016. [36] K. Ma, M. Liserre, F. Blaabjerg, "Thermal loading and lifetime estimation for power device considering mission profiles in wind power converter," IEEE Trans. on Power Electron., vol. 30, no. 2, pp. 590-602, 2015. [37] N. Baker, S. Munk Nielsen, F. Iannuzzo, and M. Liserre, “Online junction temperature measurement using peak gate current,” IEEE Applied Power Electronics Conference and Exposition (APEC), March 2015, pp. 1270-1275. [38] S. Zhou, L. Zhou, and P. Sun, “Monitoring potential defects in an IGBT module based on dynamic changes of the gate current,” IEEE Trans on Power Electron., vol. 28, no. 3, pp. 1479-1487, 2013. [39] K. Ma, F. Blaabjerg, and M. Liserre, “Electro-thermal model of power semiconductors dedicated for both case and junction temperature estimation,” Proc. PCIM, 2013, pp. 1042-1046. [40] A. S. Flelschera, L. B. C. Chang, and Johnson, “The effect of die attach voiding on the thermal resistance of chip level packages,” Microelectronics Reliability, vol. 46, no. 6, pp. 794-804, 2006. [41] R. S. Otiabkc, R. E. Bhatti, “Thermal effect of die- attach voids location and style on performance of chip level package," 3rd IEEE International Conference on Adaptive Science and Technology (ICAST), 2011, pp. 231-236. [42] Y. Xia, Y. Luo, B. Wang, "Effects of voids in solder layer on the temperature distribution," Marine Electric and Electronic Engineering, vol. 35, no. 12, pp. 1-5, 2015. [43] P. Lefranc,D. Planson,H.Morel, "Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)," Solid-State Electronics, vol. 53, pp. 944-954, 2009. [44] I. Masayasu, H. Koji, K. Sachiko, "Investigation of IGBT turn-on failure under high voltage operation," Microelectronics Reliability,vol. 44, pp. 1431-1436, 2004. [45] J. M. Domeij,J. Lutz,and D.Silber, "On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche," IEEE Transactions on Electron Devices, vol. 50, no. 2, pp. 486-493, 2003. [46] S. Milady,D. Silber,F. Pfirsch,et al. "Simulation studies and modeling short circuit current oscillations in IGBTs," Proceeding of ISPSD,2009, pp. 37-40. [47] S. Hu,Y. Zhu,and Y. Duan, "An impact analysis of gate resistance on static and dynamic dissipation of IGBT modules," Proceeding of ICECC,2011, pp. 715-718. [48] I. Bararia, J. Barrena, G. Abad, "An experimentally verified active gate control method for the series connection of IGBT/ diodes," IEEE trans. on Power electron. vol. 27, no. 2, 1025- 1038, 2012. [49] Z. Wang, X. Shi, L. M. Tolbert, "A di/dt feedback- based active gate driver for smart switching and fast overcurrent protection of IGBT modules," IEEE Trans. Power Electron., vol. 29, no. 7, pp. 3720-3732, Jul. 2014. [50] W. S. Im, J. M. Kim, D. C. Lee, and K. B. Lee, "Diagnosis and fault tolerant control of 3-phase AC-DC PWM converter systems," IEEE Trans. Ind. Appl., vol. 49, no. 4, pp. 1539- 1547, 2013. [51] Y. Tang, B. Wang, M. Chen, "Simulation model and parameter extraction of Field-Stop(FS) IGBT," Microelectronics Reliability, vol. 52, no. 12, pp. 2920-2931, 2012. [52] Y. Luo, F. Xiao, B. Wang, "A voltage model of PIN diodes at reverse recovery under short-time freewheeling," IEEE Trans. Power Electron., early access article, 2016. [53] M. Chen, B. Wang, and Y. Tang, "Test of IGBT transient thermal impedance and modeling research on thermal model," Advanced Materials Research, vol. 148-149, no. 1, pp. 429-433, 2011. [54] B. Liu, "Study on fatigue failure mechanism and health condition monitoring methods for IGBT," Ph.D. dissertation. Dept. Electr. Eng., Naval University of Engineering, China, 2014. [55] B. Wang, Y. Luo, S. Zhang, et al. "Analysis of Limiting Power Loss and Thermal Failure Mechanism," Transactions of China Electrotechnical Society, vol. 31, no. 12, pp. 135- 141, 2016. |
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