中国电气工程学报（英文） ›› 2016, Vol. 2 ›› Issue (1): 85-90.

• • 上一篇    下一篇

Elimination of Collector Current Impact in TSEP-based Junction Temperature Extraction Method for High-Power IGBT Modules

Xiang Wang, Chongchong Zhu, Haoze Luo,Wuhua Li, and Xiangning He   

  1. College of Electrical Engineering, Zhejiang University, Hangzhou, 430074, China
  • 出版日期:2016-01-20 发布日期:2019-10-31
  • 通讯作者: * , E-mail:woohualee@zju.edu.cn.
  • 基金资助:
    Supported by the National Nature Science Foundations of China (51490682, 51677166)

Elimination of Collector Current Impact in TSEP-based Junction Temperature Extraction Method for High-Power IGBT Modules

Xiang Wang, Chongchong Zhu, Haoze Luo,Wuhua Li, and Xiangning He   

  1. College of Electrical Engineering, Zhejiang University, Hangzhou, 430074, China
  • Online:2016-01-20 Published:2019-10-31
  • Contact: * , E-mail:woohualee@zju.edu.cn.
  • About author:Xiang Wang received the B.S. degree from the School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China, in 2014. He is currently pursuing his M.S. degree in the College of Electrical Engineering, Zhejiang University, Hangzhou, China. His research interests include IGBT modeling.
    Chongchong Zhu received the B.Sc degree from the Electrical Engineering, University of Jinan, Jinan, China, in 2012, and is currently pursuing the M.Sc degree in College of Electrical Engineering, Zhejiang University, Hangzhou, China. His research interests include high power IGBT module test and IGBT junction temperature extraction.
    Haoze Luo received the B.S. and M.S. degrees from the Department of Electrical Engineering, Hefei University of Technology, Hefei, China, in 2008 and 2011, respectively. He received the Ph.D. degree from Zhejiang University, Hangzhou, China in 2015. From January to April 2015, he was a visiting researcher at Newcastle University, Newcastle upon Tyne, U.K. He is currently working as a Postdoc at the Department of Energy Technology in Aalborg University, Denmark. His research interests include high- power converters and reliability of high- power modules.
    Wuhua Li (M’09) received the B.Sc. and Ph.D. degree in Applied Power Electronics and Electrical Engineering from Zhejiang University, Hangzhou, China, in 2002 and 2008, respectively. From 2004 to 2005, he was a Research Intern, and from 2007 to 2008, a Research Assistant in GE Global Research Center, Shanghai, China. From 2008 to 2010, he joined the College of Electrical Engineering, Zhejiang University as a Post doctor. In 2010, he was promoted as an Associate Professor. Since 2013, he has been a Full Professor at Zhejiang University. From 2010 to 2011, he was a Ryerson University Postdoctoral Fellow with the Department of Electrical and Computer Engineering, Ryerson University, Toronto, ON, Canada. His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peerreviewed technical papers and holds over 30 issued/pending patents. Due to his excellent teaching and research contributions, Dr. Li received the 2011 TOP TEN Excellent Young Staff Award and the 2012 Distinguished Young Scholar from Zhejiang University, the 2012 Outstanding Young Researcher Award from Zhejiang Province, the 2012 Delta Young Scholar from Delta Environmental & Educational Foundation and the 2012 National Outstanding Young Scholar. He received four Scientific and Technological Achievements Awards from Zhejiang Provincial Government and the State Educational Ministry of China in 2009, 2011 and 2014, respectively.
    Xiangning He (M’95--SM’96--F’10) received the B.Sc. and M.Sc. degrees from Nanjing University of Aeronautical and Astronautical, Nanjing, China, in 1982 and 1985, respectively, and the Ph.D. degree from Zhejiang University, Hangzhou, China, in 1989. From 1985 to 1986, he was an Assistant Engineer at the 608 Institute of Aeronautical Industrial General Company, Zhuzhou, China. From 1989 to 1991, he was a Lecturer at Zhejiang University. In 1991, he obtained a Fellowship from the Royal Society of U.K., and conducted research in the Department of Computing and Electrical Engineering, Heriot-Watt University, Edinburgh, U.K., as a Post-Doctoral Research Fellow for two years. In 1994, he joined Zhejiang University as an Associate Professor. Since 1996, he has been a Full Professor in the College of Electrical Engineering, Zhejiang University. He was the Director of the Power Electronics Research Institute and the Head of the Department of Applied Electronics, and he is currently the Vice Dean of the College of Electrical Engineering, Zhejiang University. His research interests are power electronics and their industrial applications. He is the author or co-author of more than 280 papers and one book Theory and Applications of Multi-level Converters (Beijing, China: China Machine Press, 2006). He holds 22 patents. Dr. He received the 1989 Excellent Ph.D. Graduate Award, the 1995 Elite Prize Excellence Award, the 1996 Outstanding Young Staff Member Award and 2006 Excellent Staff Award from Zhejiang University for his teaching and research contributions. He received seven Scientific and Technological Achievements Awards from Zhejiang Provincial Government and the State Educational Ministry of China in 1998, 2002, 2009 and 2011 respectively, and six Excellent Paper Awards. Dr. He is a Fellow of The Institute of Electrical and Electronics Engineers (IEEE) and has been appointed as IEEE Distinguished Lecturer by the IEEE Power Electronics Society in 2011. He is also a Fellow of the Institution of Engineering and Technology (formerly IEE), U.K.
  • Supported by:
    Supported by the National Nature Science Foundations of China (51490682, 51677166)

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摘要： Insulated gate bipolar transistor (IGBT) modules are widely employed in high-power conversion systems. Their junction temperature ranks as one of the most important factors in the reliability of power semiconductor devices. Thermo-sensitive electrical parameter (TSEP) is regarded as the promising solution to extract the junction temperature due to its non-invasion measurement, fast response and high accuracy. However, accurate collector current measurement is required if only the individual TSEP is adopted, which increases the complexity and cost. In this paper, the combined TSEP method is proposed to eliminate the influence of collector current (IC), where the turn-off delay time (tdoff) and maximum decrease rate of IC(max dIC/dt) are adopted and combined. The two TSEPs both have linear relationships with junction temperature and IC. When they are combined mathematically, the influence of IC is eliminated. Experiments have been implemented to validate the effectiveness of the proposed approach. The comparison between combined TSEP and two individual TSEP methods are illustrated and analyzed. 

关键词: Junction temperature, thermo-sensitive electrical parameter, non-invasiveness, online application

Abstract: Insulated gate bipolar transistor (IGBT) modules are widely employed in high-power conversion systems. Their junction temperature ranks as one of the most important factors in the reliability of power semiconductor devices. Thermo-sensitive electrical parameter (TSEP) is regarded as the promising solution to extract the junction temperature due to its non-invasion measurement, fast response and high accuracy. However, accurate collector current measurement is required if only the individual TSEP is adopted, which increases the complexity and cost. In this paper, the combined TSEP method is proposed to eliminate the influence of collector current (IC), where the turn-off delay time (tdoff) and maximum decrease rate of IC(max dIC/dt) are adopted and combined. The two TSEPs both have linear relationships with junction temperature and IC. When they are combined mathematically, the influence of IC is eliminated. Experiments have been implemented to validate the effectiveness of the proposed approach. The comparison between combined TSEP and two individual TSEP methods are illustrated and analyzed. 

Key words: Junction temperature, thermo-sensitive electrical parameter, non-invasiveness, online application