Review of Si IGBT and SiC MOSFET Based on Hybrid Switch*

doi:10.23919/CJEE.2019.000017

中国电气工程学报（英文） ›› 2019, Vol. 5 ›› Issue (3): 20-29.doi: 10.23919/CJEE.2019.000017

出版日期:2019-09-20 发布日期:2019-12-20

Review of Si IGBT and SiC MOSFET Based on Hybrid Switch^*

Puqi Ning^1,2,*, Tianshu Yuan^1,2, Yuhui Kang^1,2, Cao Han^1,2, Lei Li^1,2

1. Key Laboratory of Power Electronics and Electric Drive, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;
2. University of Chinese Academy of Sciences, Beijing 100190, China

Online:2019-09-20 Published:2019-12-20
Contact: * Email:npq@mail.iee.ac.cn
About author:Puqi Ning received B.S. and M.S. degrees in Electrical Engineering from Tsinghua University, Beijing, China, in 2004, and 2006, respectively, and Ph.D. degree in Electrical Engineering from Virginia Tech, Blacksburg, US, in 2010.From 2010 to 2013, he was with Oak National Laboratory, Knoxville, TN, USA. Since 2013, he has been a full professor in the Institute of Electrical Engineering, Chinese Academy of Sciences. Dr. Ning has been involved in high-temperature packaging and high-density converter design for more than 10 years.Tianshu Yuan received his B.S. degree in Electrical Engineering from Shandong University, Jinan, China, in 2016. He is presently working towards his M.S. degree at the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China. He has been working on power-device modeling and high-density converter design for 2 years.Yuhui Kang received a B.S. degree in Electrical Engineering and Automatization Specialty from Shijiazhuang Tiedao University, Hebei, China, in 2015. She also received an M.S. degree from the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China in 2019.Her research interests are in packaging technology of power electronic devices.Cao Han received his B.S. degree in Electrical Engineering from Harbin Engineering University, Harbin, China, in 2016. He is presently working towards his Ph.D. degree at the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China. He has been working on power-device modeling and high-density converter design for 3 years. Lei Li received a B.S. degree in Electrical Engineering from the Beijing Institute of Technology, Beijing, China, in 2014. He also received his Ph.D. degree from the Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, China in 2019.His research interests include power-device packaging and reliability, power-device modeling, and high-density converter design.

摘要/Abstract

Abstract: SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.

Key words: Hybrid module, SiC device, Si IGBT, SiC MOSFET

. [J]. 中国电气工程学报（英文）, 2019, 5(3): 20-29.

Puqi Ning, Tianshu Yuan, Yuhui Kang, Cao Han, Lei Li. Review of Si IGBT and SiC MOSFET Based on Hybrid Switch^*[J]. Chinese Journal of Electrical Engineering, 2019, 5(3): 20-29.

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Review of Si IGBT and SiC MOSFET Based on Hybrid Switch^*

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