A Novel 5-level Flying Capacitor Bridgeless PFC Converter Based on Cost-effective Low-voltage eGaN FETs*

doi:10.23919/CJEE.2020.000019

Chinese Journal of Electrical Engineering ›› 2020, Vol. 6 ›› Issue (3): 56-64.doi: 10.23919/CJEE.2020.000019

• Special Issue Papers • Previous Articles Next Articles

扫码分享

A Novel 5-level Flying Capacitor Bridgeless PFC Converter Based on Cost-effective Low-voltage eGaN FETs^*

Yuanyuan Xu, Jun Wang, Kun Xiong, Geng Yin^*

College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

Received:2020-05-23 Revised:2020-07-29 Accepted:2020-08-18 Published:2020-10-14
Contact: * E-mail: yingeng@hnu.edu.cn
About author:Yuanyuan Xu received a B.S. degree in electrical engineering from the College of Electrical and Information Engineering, Hunan University, Changsha, China, in 2019. She is presently working towards her M.S. degree in the College of Electrical and Information Engineering, Hunan University, Changsha, China. She has been working on power electronics for 1 year. Her research interests include power semiconductor devices and their applications.
Jun Wang (S'06-M'10-SM'15) received a B.S. degree from the Huazhong University of Science and Technology, Wuhan, China in 2000; an M.S. degree from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, in 2003; an M.E. degree from the University of South Carolina, Columbia, SC, USA, in 2005; and a Ph.D. degree from North Carolina State University, Raleigh, NC, USA, in 2010, all in electrical engineering. He was a device design engineer with Texas Instruments, Inc., Bethlehem, PA, USA, from 2010 to 2013. He became a professor with the College of Electrical and Information Engineering, Hunan University, Changsha, China, in 2014. His research interests include power semiconductor devices and their applications in power electronics systems. Dr. Wang has been an associate editor of IEEE Journal of Emerging and Selected Topics in Power Electronics since 2017.;Kun Xiong received a B.S. degree in automation from the College of Information Engineering, Xiangtan University, Xiangtan, China, in 2015; and an M.S. degree in electric engineering from the College of Electrical and Information Engineering, Hunan University, Changsha, China, in 2020. His research interests include power semiconductor devices and their applications.
Geng Yin received a B.S. degree in the department of Mechanical Design, Shenyang Institute of Technology, Shenyang, China, in 1997; and an M.S. degree from the Ammunition Research Institute, Shenyang Institute of Technology, Shenyang, China, in 2000. He joined Hunan University in 2000. He has participated in the Provincial Education Reform Project, the National SIT Project, and several projects supported by the Department of Science and Technology of Hunan Province, China. His current research interests include enterprise information, software engineering and mobile internet.
Supported by:
*National Natural Science Foundation of China (51977068).

Abstract

Abstract: In this study, a type of multilevel flying capacitor bridgeless PFC converter is proposed that permits the use of economical and efficient 100 V GaN transistors. Compared with the popular two-level totem-pole bridgeless PFC converters achieved using the much more expensive 650 V GaN devices, this new design has several distinct advantages: lower component costs, lower dv/dt, lower power losses, and reduced concerns about device reliability. A 1.6 kW, 5-level PFC converter prototype is designed and fabricated with an efficiency of 99.18% and a power factor of 0.99, which are experimentally demonstrated. The operation principle, design considerations, control strategy and experimental results are discussed.

Key words: Bridgeless PFC converters, flying capacitor, GaN, multilevel, topology

Yuanyuan Xu, Jun Wang, Kun Xiong, Geng Yin. A Novel 5-level Flying Capacitor Bridgeless PFC Converter Based on Cost-effective Low-voltage eGaN FETs^*[J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 56-64.

References

[1] F C Lee, Q Li, Z Liu, et al.Application of GaN devices for 1 kW server power supply with integrated magnetics.CPSS Transactions on Power Electronics and Applications, 2016, 1(1): 3-12.
[2] L Huber, Y Jang, M M Jovanovic.Performance evaluation of bridgeless PFC boost rectifiers.IEEE Transactions on Power Electronics, 2008, 23(3): 1381-1390.
[3] P Q Ning, T S Yuan, Y H Kang, et al.Review of Si IGBT and SiC MOSFET based on hybrid switch.Chinese Journal of Electrical Engineering, 2019, 5(3): 20-29.
[4] L Zhou, Y Wu, J Honea, et al.High-efficiency true bridgeless totem pole PFC based on GaN HEMT: Design challenges and cost-effective solution. Proceedings of PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2015: 1-8.
[5] E Persson.How 600 V GaN transistors improve power supply efficiency and density.Power Electron. Eur., 2015(2): 21-24.
[6] E Persson.Practical application of 600 V GaN HEMTs in power electronics.Proc. IEEE Appl. Power Electron. Conf. Expo.(APEC), 2015.
[7] A Q Huang. Wide bandgap (WBG) power devices and their impacts on power delivery systems. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2016: 20.1.1-20.1.4.
[8] E A Jones, F F Wang, D Costinett.Review of commercial GaN power devices and GaN-based converter design challenges.IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3): 707-719.
[9] A Lidow.GaN transistors: Giving new life to Moore's Law. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 2015: 1-6.
[10] A B Ponniran, K Orikawa, J Itoh.Minimum flying capacitor for N-level capacitor DC/DC boost converter.IEEE Transactions on Industry Applications, 2016, 52(4): 3255-3266.
[11] B Mirafzal.Survey of fault-tolerance techniques for three-phase voltage source inverters.IEEE Transactions on Industrial Electronics, 2014, 61(10): 5192-5202.
[12] P Lezana, J Pou, T A Meynard, et al.Survey on fault operation on multilevel inverters.IEEE Transactions on Industrial Electronics, 2010, 57(7): 2207-2218.
[13] F Richardeau, T T L Pham. Reliability calculation of multilevel converters: Theory and applications.IEEE Transactions on Industrial Electronics, 2013, 60(10): 4225-4233.
[14] Z H Fang, D Jiang, Y C Zhang.Study of the characteristics and suppression of EMI of inverter with SiC and Si devices.Chinese Journal of Electrical Engineering, 2018, 4(3): 37-46.
[15] GS61004B, GaN System Datasheet. [2020-05-01].https:// gansystems.com/wp-content/uploads/2018/04/GS61004B-DS-Rev-180419.pdf.
[16] EPC2104, EPC Datasheet. [2020-05-01].https://epc-co. com/ epc/Portals/0/epc/documents/datasheets/EPC2104_datasheet.pdf.
[17] GS66516B, GaN System Datasheet. [2020-05-01].https:// gansystems.com/wp-content/uploads/2019/01/GS66516B-DS-Rev-190121-1.pdf.
[18] GS66508T, GaN System Datasheet. [2020-05-01].https:// gansystems.com/wp-content/uploads/2019/04/GS66508T-DS-Rev-190423.pdf.
[19] GS66504B, GaN System Datasheet. [2020-05-01].https:// gansystems.com/wp-content/uploads/2018/04/GS66504B-DS-Rev-180422.pdf.
[20] IGO60R070D1 600V CoolGaN™ enhancement-mode Power Transistor, Infineon Datasheet. [2020-05-01].https:// www.infineon.com/dgdl/Infineon-IGO60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016685f053216514.
[21] TP65H035WSQA, Transphorm Datasheet. [2020-05-01].https:// www.transphormchina.com/en/document/datasheet-tp65h 035wsqa-650v-aec-q101-gan-fet/.
[22] W T Mclyman.Transformer and inductor design handbook. 3rd ed. New York: Marcel Dekker, 2004.
[23] R Erickson, D Maksimovic.Fundamentals of power electronics. Holland: Kluwer Academics, 2000.
[24] S B Qin, Y T Lei, I Moon, et al.A high power density power factor correction front end based on a 7-level flying capacitor multilevel converter.2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC), 2016: 1-6.

A Novel 5-level Flying Capacitor Bridgeless PFC Converter Based on Cost-effective Low-voltage eGaN FETs^*

PDF

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	DU Yixian, YIN Peng, LI Rong, TIAN Qihua, ZHOU Xiangman. Macro and Micro Trans-scale Topological Optimization Design of Gradient Structure with Both Energy Absorption and Load-bearing Characteristics [J]. Journal of Mechanical Engineering, 2020, 56(7): 171-180.
[2]	YANG Tingli, SHEN Huipng, LIU Anxin, HANG Lubin. Basic Ideas and Mathematical Methods of Mechanism Topology Theory——Review of Several Original Mechanism Topology Theories in a Methodological Perspective [J]. Journal of Mechanical Engineering, 2020, 56(3): 1-15.
[3]	GU Tao, LI Sujian. Research on Multi-level Inventory Optimization Algorithm of Repairable Spare Parts Based on Two Improved Differential Evolution [J]. Journal of Mechanical Engineering, 2020, 56(14): 245-253.
[4]	ZHANG Yuanpeng, ZHAO Fanghui, ZHANG Guoju, YANG Jie, DUAN Lianfeng. Preparation of Na_0.67Mn_0.67Ni_0.33-_xCo_xO₂ as Cathode Material for Sodium Ion Battery by Multi-metal Substitution and Electrochemical Performance [J]. Journal of Mechanical Engineering, 2020, 56(10): 117-126.
[5]	WEN Yongpeng, ZHENG Xiaoming, WU Aizhong, LIU Yuejie. Topology Optimization of Urban Rail Wheel Based on BESO Algorithm [J]. Journal of Mechanical Engineering, 2020, 56(10): 191-199.
[6]	Fujin Deng, Yongqing Lü, Chengkai Liu, Qian Heng, Qiang Yu, Jifeng Zhao. Overview on Submodule Topologies, Modeling, Modulation, Control Schemes, Fault Diagnosis, and Tolerant Control Strategies of Modular Multilevel Converters^* [J]. Chinese Journal of Electrical Engineering, 2020, 6(1): 1-21.
[7]	Jingshi BAI, Wei ZHANG, Hailong LI. Switch-based Intelligent Substation Process Layer Monitoring System [J]. Journal of Electrical Engineering, 2020, 15(1): 122-127.
[8]	SHEN Jiaxing, XU Ping, YU Yinghua, ZHENG Sixian. Optimization Design and Comprehensive Performance Analysis of BFPC Gantry Machine Framework Components [J]. Journal of Mechanical Engineering, 2019, 55(9): 127-135.
[9]	LIAO Zhongyuan, WANG Yingjun, WANG Shuting. Graded-density Lattice Structure Optimization Design Based on Topology Optimization [J]. Journal of Mechanical Engineering, 2019, 55(8): 65-72.
[10]	Qiqi Li, Bangyin Liu, Shanxu Duan. Simplified Analytical Model for Estimation of Switching Loss of Cascode GaN HEMTs in Totem-pole PFC Converters^* [J]. Chinese Journal of Electrical Engineering, 2019, 5(3): 1-9.
[11]	Shizhen Huang, Jianshan Zhang, Wengang Wu, Ling Xia. Impact of Non-ideal Waveforms on GaN Power FET in Magnetic Resonant Wireless Power Transfer System^* [J]. Chinese Journal of Electrical Engineering, 2019, 5(3): 30-41.
[12]	WANG Huamin, QIN Guohua, HU Zheng, LIN Feng, WU Zhuxi, HAN Xiong. A Structural Topology Optimal Design Approach to Machining Deformation Control for Aeronautical Monolithic Components [J]. Journal of Mechanical Engineering, 2019, 55(21): 127-138.
[13]	RONG Jianhua, ZHAO Shengning, LI Fangyi, YU Liaohong, RONG Xuanpei, CHEN Cheng. Clear Structural Topology Optimization Designs Including Minimum Allowable Length Scale Limit on Fabrication Holes [J]. Journal of Mechanical Engineering, 2019, 55(19): 174-185.
[14]	CAI Tengfei, PAN Yan, MA Fei, QIU Linbin, XU Pingping. Effects of Outlet Geometry of Organ-pipe Nozzle on Cavitation Due to Impingement of the Waterjet [J]. Journal of Mechanical Engineering, 2019, 55(18): 150-156.
[15]	YAN Mengxue, TIAN Xiaoyong, PENG Gang, LI Dichen, YAO Ruijuan, ZHANG Wei, BAI Rui, MENG Weijie. Performance Study of Lightweight Composites Equipment Section Support Fabricated by Selective Laser Sintering [J]. Journal of Mechanical Engineering, 2019, 55(13): 144-150.