Special Issue

Special Issue on Wide Bandgap Power Electronic Devices and Applications


Guest Editor-in-Chief：
Puqi Ning (Institute of Electrical Engineering, Chinese Academy of Science, China)  
Dong Jiang (Huazhong University of Science and Technology, China)
Liuchen Chang (University of New Brunswick, Canada)

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Review of Power Module Automatic Layout Optimization Methods in Electric Vehicle Applications* Puqi Ning, Huakang Li, Yunhao Huang, Yuhui Kang Chinese Journal of Electrical Engineering    2020, 6 (3): 8-24.   DOI: 10.23919/CJEE.2020.000015 Abstract （383）      PDF       Knowledge map    The layout of power modules is a crucial design consideration, especially for silicon carbide devices. For electrical layout, optimizing the parasitic parameters can improving switching loss and dynamic behavior. For thermal layout, reducing the thermal resistance and controlling thermal capacitance can reduce the local hot point. Conventional layout design iterations are based on human knowledge and experience. But the major drawback of manual design methods is a limited choice of candidates, large time consumption and also the lack of consistency. With the introduce of automatic layout design, these challenges can be overcome which in the meanwhile alleviates current and temperature imbalance. By reviewing element representation, placement, routing, fitness evaluation, and the optimization algorithm approaches, a state-of-the-art power module layout design method for electric vehicle applications is introduced. Reference | Related Articles | Metrics

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A Novel 5-level Flying Capacitor Bridgeless PFC Converter Based on Cost-effective Low-voltage eGaN FETs* Yuanyuan Xu, Jun Wang, Kun Xiong, Geng Yin Chinese Journal of Electrical Engineering    2020, 6 (3): 56-64.   DOI: 10.23919/CJEE.2020.000019 Abstract （350）      PDF       Knowledge map    In this study, a type of multilevel flying capacitor bridgeless PFC converter is proposed that permits the use of economical and efficient 100 V GaN transistors. Compared with the popular two-level totem-pole bridgeless PFC converters achieved using the much more expensive 650 V GaN devices, this new design has several distinct advantages: lower component costs, lower dv/dt, lower power losses, and reduced concerns about device reliability. A 1.6 kW, 5-level PFC converter prototype is designed and fabricated with an efficiency of 99.18% and a power factor of 0.99, which are experimentally demonstrated. The operation principle, design considerations, control strategy and experimental results are discussed. Reference | Related Articles | Metrics

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Comparison of Wide-bandgap Devices in 1 kV, 3 kW LLC Converters* Zhanbiao Gu, Jiacheng Tang, Wenming Zhu, Kaiqi Yao, Zhesi Gao, Weijie Shi, Zhiliang Zhang, Xiaoyong Ren Chinese Journal of Electrical Engineering    2020, 6 (3): 65-72.   DOI: 10.23919/CJEE.2020.000020 Abstract （340）      PDF       Knowledge map    Emerging wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron-mobility transistors (HEMTs) provide new opportunities to realize high efficiency, high power density, and high reliability in several kHz, 1 kV input, and several kW output applications. However, the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage, high-frequency, medium-high-power DC conversion applications have not yet been investigated thoroughly. Two 1 kV, 3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters, power density, zero voltage switch realization, and overall efficiency. This provides guidance for the appropriate evaluation of WBG devices in high-voltage, high-frequency, and medium-high-power applications. Reference | Related Articles | Metrics

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Periodic Variation in the Effect of Switching Frequency on the Harmonics of Power Electronic Converters* Qiao Li, Jianan Chen, Dong Jiang Chinese Journal of Electrical Engineering    2020, 6 (3): 35-45.   DOI: 10.23919/CJEE.2020.000017 Abstract （339）      PDF       Knowledge map    Switching frequency is an important factor in the performance control of power electronic converters. It can help optimize switching losses, switching ripples and electromagnetic interference, especially for newly developed high-switching-frequency silicon carbide converters. Periodic variation in the switching-frequency methods has been developed for this purpose, especially the model-predictive variable switching-frequency pulse width modulation (VSFPWM) method. The effect of periodic switching-frequency variation on the harmonics of a converter using double Fourier analysis and simulations are investigated. This work verifies that the switching harmonics can be reduced by periodic variation in the switching frequency, and the low-frequency (baseband) harmonics only incur a slight change. The analysis provides a theoretical foundation for the application of VSFPWM in power electronic converters. Reference | Related Articles | Metrics

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Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents* Dan Zheng, Yuhui Kang, Han Cao, Xiaoguang Chai, Tao Fan, Puqi Ning Chinese Journal of Electrical Engineering    2020, 6 (3): 1-7.   DOI: 10.23919/CJEE.2020.000014 Abstract （318）      PDF       Knowledge map    A junction temperature monitoring method has been presented based on the on-state voltage at high currents. With a simplified physical model, this method mapped the relationship between junction temperature and on-state voltage. The tough calibration and signal sensing issues are solved. Verified by body-diode voltage detecting method, the presented method shows a good performance and high accuracy, in the meantime, it would not change the modulation strategy and topology of the converter. Reference | Related Articles | Metrics

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Implementation of 1.7 kV Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors in Auxiliary Power Supplies for Industrial Applications Xuning Zhang, Gin Sheh Chinese Journal of Electrical Engineering    2020, 6 (3): 46-55.   DOI: 10.23919/CJEE.2020.000018 Abstract （274）      PDF       Knowledge map    An auxiliary power supply (Aux-PS) has become an essential component of electronic equipment for many industrial applications, such as in motor drives, photovoltaic (PV) inverters, uninterruptible power supply (UPS) systems and modular multilevel converters. The introduction of 1 700 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is useful for such applications, providing benefits with respect to a low on-state resistance, smaller package, low switching loss and single-switching implementation. A single end flyback Aux-PS is designed for industrial applications with a wide input voltage range using 1.7 kV SiC MOSFETs. The special design tradeoffs involved in the usage of SiC MOSFETs are discussed in detail, such as those with regard to gate driving voltage selection, isolation transformer design considerations, and clamping circuit design details. A 60 W demonstration hardware is developed and tested under different working conditions. The results verify the higher efficiency and better thermal performance of the proposed hardware relative to those of traditional Si solutions. Reference | Related Articles | Metrics

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Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices* Haidong Yan, Peijie Liang, Yunhui Mei, Zhihong Feng Chinese Journal of Electrical Engineering    2020, 6 (3): 25-34.   DOI: 10.23919/CJEE.2020.000016 Abstract （237）      PDF       Knowledge map    Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics. Excellent thermal conductivity, high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices, specifically SiC devices. The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale, micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented. The emerging rapid sintering approaches, such as the electric-assisted approach, are briefly introduced and the technical outlook is provided. In addition, the study highlights the importance of creating a brief resource guide on using the correct sintering methods. Reference | Related Articles | Metrics