CJEE

Chinese Journal of Electrical Engineering ›› 2020, Vol. 6 ›› Issue (3): 65-72.doi: 10.23919/CJEE.2020.000020

• Special Issue Papers • Previous Articles     Next Articles

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Comparison of Wide-bandgap Devices in 1 kV, 3 kW LLC Converters*

Zhanbiao Gu1, Jiacheng Tang1, Wenming Zhu2, Kaiqi Yao2, Zhesi Gao2, Weijie Shi2, Zhiliang Zhang2,*, Xiaoyong Ren2   

  1. 1. Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    2. Aero-Power Sci-Tech Center, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received:2020-04-27 Revised:2020-05-03 Accepted:2020-05-20 Published:2020-10-14
  • Contact: * E-mail: zlzhang@nuaa.edu.cn
  • About author:Zhanbiao Gu received his B.S. degree in microelectronic technology from Jilin University (JLU), Changchun, China, in 2000. He is currently a senior engineer in Hebei Semiconductor Research Institute. His research interest is high frequency power conversion with wide bandgap devices(WBG).
    Jiacheng Tang received his B.S. degree in electrical engineering in 2017 from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China. He is currently an engineer in Hebei Semiconductor Research Institute. His research interests include high-frequency silicon carbide applications and magnetic components for power electronic circuits.
    Wenming Zhu is currently working toward his M.S. degree at the Aero-Power Sci-Tech Center, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China. His research interests include high- voltage LLC converter and SiC applications.
    Kaiqi Yao received his B.S. degree in electrical engineering from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2018. He is currently working toward his M.S. degree at the Aero-Power Sci-Tech Center, NUAA. His current research interests include high-frequency SiC applications and power converter control techniques.
    Zhesi Gao is currently working toward his M.S. degree at the Aero-Power Sci-Tech Center, Nanjing University of Aeronautics and Astronautics (NUAA). His research interests include high-frequency SiC drivers and applications.
    Weijie Shi is currently working toward his M.S. degree at the Aero-Power Sci-Tech Center, Nanjing University of Aeronautics and Astronautics (NUAA). His research interests include auxiliary power supply and wide-bandgap semiconductor devices.
    Zhiliang Zhang (S'03-M'09-SM'14) received his B.S. and M.S. degrees from Nanjing University of Aeronautics and Astronautics (NUAA), China, in 2002 and 2005, and Ph.D. degree from the Department of Electrical and Computer Engineering, Queen's University, Kingston, ON, Canada, in 2009. He is currently a professor with the Aero-Power Sci-Tech Center, NUAA. He was a secretary of PELS TC on power and control core technologies from 2013 to 2016. He authored or coauthored 40 papers in IEEE Transactions on Power Electronics and more than 70 papers in IEEE conferences. He holds 12 China patents and one U.S. patent. He coauthored the book “High Frequency MOSFET Gate Drivers: Technologies and Applications (IET, 2017)”. His research interests include high-frequency power conversion with wide-bandgap devices.Dr. Zhang was a winner of “United Technologies Corporation Rong Hong Endowment” in 1999. He was the recipient of National Excellent Youth Fund from National Natural Science Foundation of China in 2017. He is an associate editor of IEEE Journal of Emerging and Selected Topics of Power Electronics (IEEE JESTPE) since July 2018. He was also a guest associate editor for the special issue of JESTPE: Resonant and soft-switching techniques with wide bandgap devices and power integration with WBG devices and components, 2018 and 2019, respectively.
    Xiaoyong Ren (S'04-M'11) received his B.S., M.S., and Ph.D. degrees in electrical engineering from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2002, 2005, and 2008, respectively.From 2009 to 2011, he was a postdoctoral researcher at the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA. He is currently with the Department of Electrical Engineering, NUAA. He has authored and coauthored more than 30 technical papers published in international journals. His current research interests include DC-DC conversion, converter control techniques, GaN device application, and renewable power systems. He led student teams to win Grand Prize Award from the International Future Energy Challenge (IFEC) in 2016, top three finalist in Siligery Power Electronics Design Competition in 2015.
  • Supported by:
    *Industrial Prospective and Key Core Technology Funding of Jiangsu Province (BE2019113).

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Abstract: Emerging wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron-mobility transistors (HEMTs) provide new opportunities to realize high efficiency, high power density, and high reliability in several kHz, 1 kV input, and several kW output applications. However, the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage, high-frequency, medium-high-power DC conversion applications have not yet been investigated thoroughly. Two 1 kV, 3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters, power density, zero voltage switch realization, and overall efficiency. This provides guidance for the appropriate evaluation of WBG devices in high-voltage, high-frequency, and medium-high-power applications.

Key words: Wide-bandgap devices, application, high voltage, medium-high power