CJEE

Chinese Journal of Electrical Engineering ›› 2021, Vol. 7 ›› Issue (2): 61-69.doi: 10.23919/CJEE.2021.000016

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Mechanism of Wireless Power Transfer System Waveform Distortion Caused by Nonideal Gallium Nitride Transistor Characteristics*

Shaoyu Sun1,2, Jianshan Zhang2, Wengang Wu2, Ling Xia3,*, Yufeng Jin1,2   

  1. 1. Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    2. Institute of Microelectronics, Peking University, Beijing 100871, China;
    3. Shenzhen Hai Li Tech., Inc., Shenzhen 518129, China
  • Received:2020-07-28 Revised:2020-11-19 Accepted:2021-01-06 Online:2021-06-25 Published:2021-07-08
  • Contact: * E-mail: 1005820199@qq.com
  • About author:Shaoyu Sun received his B.S. degree in microelectronics science and engineering from Xidian University, Xi'an, China, in 2018. Since 2018, he has been working toward his M.S. degree at the School of Information Engineering, Peking University of Shenzhen, Shenzhen, China. He has published two academic papers and since 2019 has been studying at Peking University, Beijing, China. His current research interests include GaN devices for advanced radio frequency and power electronics applications.
    Jianshan Zhang received his B.S. degree in electrical engineering from Jimei University, Xiamen, China, in 2017. Since 2017, he has been working toward his M.S. degree at the College of Physics and Information Engineering, Fuzhou University, Fuzhou, China. Since 2018, he has been studying at Peking University, Beijing, China, through a joint training program between schools. His current research interests include the design and testing of wireless power transfer systems, GaN, and power electronic devices and applications.
    Wengang Wu received his B.S. and Ph.D. degrees in electrical engineering, respectively, from Fudan University, Shanghai, China, and Xi'an Jiaotong University, Xi'an, China. From 1995 to 1997, he worked as a postdoctoral fellow at the Institute of Semiconductors, Chinese Academy of Sciences. From 1997 to 2000, he studied abroad at the University of California, Los Angeles, and became a postdoctoral researcher. His major scientific research works include the preparation of quantum dot superlattices of Si/Ge and III-V group materials and design, fabrication, characteristic tests, and simulation research on high-frequency high-power AlGaN/GaN HEMTs and amplifiers. His current research interests include GaN power electronic devices and micro and nano electromechanical systems technology. He has published more than 200 research papers in first-class international academic journals, in domestic core academic journals, and at internationally important academic conferences. He is now a full professor, doctoral supervisor, and vice-head of the Institute of Micro & Nanoelectronics at Peking University.
    Ling Xia received his B.S. and M.S. degrees from Peking University in 2003 and 2006, respectively, and his Ph.D. degree from the Massachusetts Institute of Technology in 2012, all in electrical engineering. He has more than 10 years of experience in compound semiconductor devices and has authored over 20 papers and holds 10 patents in this field. From 2012 to 2013, he was a senior engineer at MACOM Technology Solutions, Inc. From 2013 to 2018, he was with Cambridge Electronics, Inc., working on GaN power electronics. His current research interests include III-V devices for advanced radio frequency and power electronics applications.
    Yufeng Jin received his doctoral degree in physical and optical-electronics engineering from Southeast University, China, in 1999. Since then, he has worked as a post-doctoral fellow, associate professor, and professor at Peking University and Peking University, Shenzhen Graduate School. His research interests focus on micro electromechanical systems sensors, TSV-related 3D integration of microsystems, and their application systems. His 3D SiP group has established a close relationship with Intel, Samsung, Simtech, Huawei, SMIC, ASTRI, and CETC on the development of TSV 3D integration technologies.
  • Supported by:
    * TSV 3D Integrate Micro/Nanosystem Lab (ZDSYS201802061805105), the Natural Science Foundation of Shenzhen (JCYJ20190808155007550), and Shenzhen Science Plan (JSGG20180504170016884).

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Abstract: Gallium nitride (GaN) field-effect transistors have low ON resistance and switching losses in high-frequency (>MHz) resonant wireless power transfer systems. Nevertheless, their performance in the system is determined by their characteristics and operation mode. A particular operating mode in a 6.78-MHz magnetic resonant wireless transfer system that employs class-D GaN power amplifiers in the zero-voltage switching mode is studied. Two operation modes, the forward mode and the reverse mode, are investigated. The nonideal effect under the device-level dynamic resistance and thermal effect are also analyzed. The dynamic resistance under different operation modes is demonstrated to have different generation mechanisms. Finally, the device characteristics with system operating conditions are combined, and the effects of temperature and dynamic resistance under different operating conditions are evaluated.

Key words: GaN, wireless power transfer, dynamic resistance, thermal effect