Implementation of 1.7 kV Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors in Auxiliary Power Supplies for Industrial Applications

doi:10.23919/CJEE.2020.000018

Chinese Journal of Electrical Engineering ›› 2020, Vol. 6 ›› Issue (3): 46-55.doi: 10.23919/CJEE.2020.000018

• Special Issue Papers • Previous Articles Next Articles

扫码分享

Implementation of 1.7 kV Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors in Auxiliary Power Supplies for Industrial Applications

Xuning Zhang^*, Gin Sheh

Littelfuse Inc. Round Rock, TX 78681, USA

Received:2020-02-29 Revised:2020-04-28 Accepted:2020-08-05 Published:2020-10-14
Contact: * E-mail: xuningwork45@gmail.com
About author:Xuning Zhang received his bachelor's and master's degrees in electrical engineering from Tsinghua University, Beijing, China, and his PhD degree from CPES-Virginia Tech. His research interests include SiC/GaN device characterization and driving scheme optimization, high performance semiconductor packaging, high efficiency/high power density converter design, interleaving and multilevel converters, high frequency system integration, system level EMI modeling, and filter optimization. Currently, he is the application engineering manager with Littelfuse Inc. in Round Rock, Texas. His work focuses on the application of wide band-gap power semiconductors, including characterization and evaluation of power devices, gate driving, and demo system design. He possesses an in-depth knowledge of power semiconductor technology and power converter design details and has authored and co-authored more than 50 papers in journals and leading international conferences.
Gin Sheh is an application engineer at Littelfuse Inc., in the Silicon Carbide MOSFET and diode design Department in Round Rock, Texas. Gin graduated from the Southern Illinois University of Carbondale with a master's degree in electrical and electronics engineering in 2009. Gin has over 10 years of experience in power conversion systems. He joined Littelfuse Inc. in April 2016, and his current research interests primarily concentrate on the development of long-term reliability testing platforms for SiC devices.

Abstract

Abstract: An auxiliary power supply (Aux-PS) has become an essential component of electronic equipment for many industrial applications, such as in motor drives, photovoltaic (PV) inverters, uninterruptible power supply (UPS) systems and modular multilevel converters. The introduction of 1 700 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is useful for such applications, providing benefits with respect to a low on-state resistance, smaller package, low switching loss and single-switching implementation. A single end flyback Aux-PS is designed for industrial applications with a wide input voltage range using 1.7 kV SiC MOSFETs. The special design tradeoffs involved in the usage of SiC MOSFETs are discussed in detail, such as those with regard to gate driving voltage selection, isolation transformer design considerations, and clamping circuit design details. A 60 W demonstration hardware is developed and tested under different working conditions. The results verify the higher efficiency and better thermal performance of the proposed hardware relative to those of traditional Si solutions.

Key words: Silicon carbide, MOSFET, wide input range, auxiliary power supply

Xuning Zhang, Gin Sheh. Implementation of 1.7 kV Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors in Auxiliary Power Supplies for Industrial Applications[J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 46-55.

References

[1] P Ning, T Yuan, Y Kang, et al.Review of Si IGBT and SiC MOSFET based on hybrid switch.Chinese Journal of Electrical Engineering, 2019, 5(3): 20-29.
[2] H Mhiesan, J Umuhoza, K Mordi, et al.Evaluation of 1.2 kV SiC MOSFETs in multilevel cascaded H-bridge three-phase inverter for medium-voltage grid applications.Chinese Journal of Electrical Engineering, 2019, 5(2): 1-13.
[3] G Rizzoli, L Zarri, J Wang, et al.Design of a two-switch flyback power supply using 1.7 kV SiC devices for ultra-wide input-voltage range applications. 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 2016: 1-5.
[4] J B Zhao, F Z Dai.Soft-switching two-switch flyback converter with wide range. 2008 3rd IEEE Conference on Industrial Electronics and Applications, Singapore, 2008: 250-254.
[5] J Liu, K L Wong, J Mookken.1 000 V wide input auxiliary power supply design with 1 700 V Silicon Carbide (SiC) MOSFET for three-phase applications. 2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, Fort Worth, TX, 2014: 2506-2510.
[6] D Boroyevich, X Zhang, H Bishinoi, et al.Conducted EMI and systems integration. CIPS 2014, 8th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 2014: 1-14.
[7] X Zhang, G Sheh, S Banerjee.Gate driving circuit design and gate driver power supply structure for SiC MOSFETs. PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2019: 1-7.
[8] X Zhang, G Sheh, I H Ji, et al.In-depth analysis of driving loss and driving power supply structure for SiC MOSFETs. 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 2019: 965-971.
[9] X Zhang, G Sheh, L Gant, et al.In-depth study of short-circuit robustness and protection of 1 200 V SiC MOSFETs. PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2018: 1-7.
[10] Q Wang, X Zhang, R Burgos, et al.Design considerations for a high efficiency 3 kW LLC resonant DC/DC transformer. 2015 IEEE Energy Conversion Congress and Exposition (ECCE), Montreal, QC, 2015: 5454-5461.
[11] M S S Nia, P Shamsi, M Ferdowsi, et al. Investigation of various transformer topologies for HF isolation applications.IEEE Transactions on Plasma Science, 2020, 48(2): 512-521.
[12] K Pengju, F C Lee.Transformer structure and its effects on common mode EMI noise in isolated power converters. Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, 2010: 1424-1429.
[13] J Biela, J W Kolar.Using transformer parasitics for resonant converters: A review of the calculation of the stray capacitance of transformers.IEEE Transactions on Industry Applications, 2008, 44(1): 223-233.
[14] L Dalessandro, F D S Cavalcante, J W Kolar. Self-capacitance of high-voltage transformers.IEEE Transactions on Power Electronics, 2007, 22(5): 2081-2092.

Implementation of 1.7 kV Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors in Auxiliary Power Supplies for Industrial Applications

PDF

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 9

Recommended Articles

Metrics

Comments

[1]	WU Jianwen, XU Mengjia, FAN Wenyan, CHEN Haoyu, JIANG Donghang, WANG Zhenmin. Flexible Waveform Interpulse TIG Welding for Titanium Alloy [J]. Journal of Mechanical Engineering, 2020, 56(6): 102-109.
[2]	Dan Zheng, Yuhui Kang, Han Cao, Xiaoguang Chai, Tao Fan, Puqi Ning. Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents^* [J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 1-7.
[3]	Haidong Yan, Peijie Liang, Yunhui Mei, Zhihong Feng. Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices^* [J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 25-34.
[4]	Puqi Ning, Tianshu Yuan, Yuhui Kang, Cao Han, Lei Li. Review of Si IGBT and SiC MOSFET Based on Hybrid Switch^* [J]. Chinese Journal of Electrical Engineering, 2019, 5(3): 20-29.
[5]	NI Zifeng, CHEN Guomei, XU Laijun, BAI Yawen, LI Qingzhong, ZHAO Yongwu. Effect of Different Oxidizers on Chemical Mechanical Polishing of 6H-SiC [J]. Journal of Mechanical Engineering, 2018, 54(19): 224-231.
[6]	Shiyu Jiang,Liang Shan. Application Research on Fly-Buck Topology in Digital Generator [J]. Journal of Electrical Engineering, 2017, 12(5): 50-57.
[7]	DUAN Nian, HUANG Shengui, YU Yiqing, HUANG Hui, XU Xipeng. The Material Removal Mechanism of Monocrystal SiC Scratching by Single Diamond Grit with Different Tip Radius [J]. Journal of Mechanical Engineering, 2017, 53(15): 171-180.
[8]	Zhu Ziyue,Qin Haihong,Dong Yaowen,Yan Yangguang, . Research on Wide-Bandgap Power Devices: Current Status and Future Forecasts [J]. Journal of Electrical Engineering, 2016, 11(1): 1-11.
[9]	ZHAO Qingliang, SUN Zhiyuan, GUO Bing. Chemical Mechanical Polishing of Micro-structures on SSiC [J]. Journal of Mechanical Engineering, 2015, 51(15): 183-189.