A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation

中国电气工程学报（英文） ›› 2018, Vol. 4 ›› Issue (2): 43-49.

出版日期:2018-06-25 发布日期:2019-10-31

A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation

Yanfeng Jiang, Chao Feng, Zhichang Yang, Xingran Zhao, Hong Li^*

School of Electrical Engineering, Beijing Jiaotong University, Beijing 100044, China

Online:2018-06-25 Published:2019-10-31
Contact: *, E-mail:hli@bjtu.edu.cn.
About author:Yanfeng Jiang was born in Anhui province, China, in 1993. He received the B.S. degree in electrical engineering from North University of China, Taiyuan, China, in 2017. He is currently working toward the M.S. degree in electrical engineering at the School of Electrical Engineering, Beijing Jiaotong University, Beijing, China. His current research interests is electromagnetic compatibility in power electronics. Chao Feng was born in Shanxi province, China, in 1993. He received the B.S. degree in electrical engineering from Taiyuan University of Technology, Taiyuan, China, in 2016. He is currently working toward the M.S. degree in electrical engineering at the School of Electrical Engineering, Beijing Jiaotong University, Beijing, China. His current research interests is electromagnetic compatibility in power electronics. Zhichang Yang (S'15) was born in Chifeng, China, in 1991. He received the B.S. degree in electrical engineering from Beijing Jiaotong University, Beijinng, China, in 2013, where is currently working toward the Ph.D. degree in electrical engineering in the School of Electrical Engineering. His current research interests include power electronics, electromagnetic interference, and chaos control and its applications. Xingran Zhao was born in Hebei province, China, in 1994. She received the B.S. degree in electrical engineering from Beijing Jiaotong University, Beijing, China, in 2016. She is currently working toward the M.S. degree in electrical engineering at the School of Electrical Engineering, Beijing Jiaotong University, Beijing, China. Her research interest is simulation and modeling of wide band gap power devices. Hong Li (S'07-M'09-SM'18) received her B.Sc., M.Sc., and Ph.D. degrees from Taiyuan University of Technology, South China University of Technology, and FernUniversität in Hagen, Germany, in 2002, 2005 and 2009, respectively. Currently, she is a Professor of Electrical Engineering School, Beijing Jiaotong University, China. Her research interests include nonlinear modeling, analysis and its applications, EMI suppressing methods for power electronic systems, wide band gap power devices and applications. She is Associate Editor of IEEE Transactions on Industrial Electronics, Associate Editor of the Chinese Journal of Electrical Engineering, Vice Chairman of Electromagnetic Compatibility Specialized Committee in China Power Supply Society. She has published 1 book, 30 journal papers, and 39 conference papers. She has also applied 20 patents.
Supported by:
Supported in part by the General Program of National Natural Science Foundation of China under Grant 51577010, 51777012, in part by the Fundamental Research Funds for the Central Universities under Grant 2017JBM054.

摘要/Abstract

Abstract: MOSFETs are widely used in power electronics converters. Due to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit, drain voltage spikes and oscillations will be generated during turn-off, which can affect the safety of the device and degrade the system's electromagnetic compatibility. This paper first studies the relationship between drain voltage spike and gate voltage during turn-off. Based on the effect of gate voltage on drain voltage spike, a new active gate driver that optimizes gate voltage is proposed. The proposed active gate driver detects the slope of the drain voltage and generates a positive pulse in the drain current fall phase to increase the gate voltage, thereby suppressing drain voltage spike and oscillation. In order to verify the effectiveness of the proposed active gate driver, a simulation circuit and an experimental platform are constructed and compared with the conventional gate driver. Simulation and experimental results show that the new active gate driver can effectively suppress the drain voltage spike and oscillation of MOSFETs, and can effectively reduce high-frequency EMI.

Key words: Active gate driver, electromagnetic interference, voltage spike, oscillation

. [J]. 中国电气工程学报（英文）, 2018, 4(2): 43-49.

Yanfeng Jiang, Chao Feng, Zhichang Yang, Xingran Zhao, Hong Li. A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation[J]. Chinese Journal of Electrical Engineering, 2018, 4(2): 43-49.

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A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation

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