A Review of WBG and Si Devices Hybrid Applications*

doi:10.23919/CJEE.2021.000012

中国电气工程学报（英文） ›› 2021, Vol. 7 ›› Issue (2): 1-20.doi: 10.23919/CJEE.2021.000012

收稿日期:2020-08-06 修回日期:2020-11-27 接受日期:2021-01-06 出版日期:2021-06-25 发布日期:2021-07-08

A Review of WBG and Si Devices Hybrid Applications^*

Li Zhang^*, Zhongshu Zheng, Xiutao Lou

College of Energy and Electrical Engineering, Hohai University, Nanjing 211100, China

Received:2020-08-06 Revised:2020-11-27 Accepted:2021-01-06 Online:2021-06-25 Published:2021-07-08
Contact: * E-mail: zhanglinuaa@hhu.edu.cn
About author:Li Zhang (S'11-M'13-SM'19) received the B.E. and Ph.D. degrees in electrical engineering from Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2007 and 2012, respectively.
He joined the Faculty of Electrical Engineering, Hohai University, Nanjing, China, in 2014, where he is currently a professor. From October 2012 to September 2014, he was a post-doctoral research fellow with the Department of Electrical Engineering, Tsinghua University, Beijing, China. From July to August 2012, he was a visiting scholar of electrical engineering at the Department of Energy Technology, Aalborg University, Denmark. From October 2016 to October 2017, he was a visiting scholar of electrical engineering at the Department of Electrical and Computer Engineering, Ryerson University, Canada. He has authored and coauthored more than 60 peer-reviewed papers published in journals and conference proceedings. He is the holder of more than 20 patents. His current research interests include high-performance power converters and distributed generation technology.
Dr. Zhang was the recipient of the Outstanding Reviewer Award of IEEE Transactions on Power Electronics in 2014. He is currently an associate editor of the Journal of Power Electronics.
Zhongshu Zheng (S'18) was born in Shandong, China, in 1996. He received the B.S. degree in electrical engineering from Shandong Agricultural University, Taian, China, in 2018. He is currently working toward the Ph.D. degree in electrical engineering in Hohai University, Nanjing, China. His research interests include DC-AC converter control, topology, and renewable energy generation technologies.
Xiutao Lou was born in Anhui, China, in 1996. He received the B.S. degree from the College of Energy and Electrical Engineering, Hohai University, Nanjing, China, in 2019, where he is currently working toward the M.S. degree in electrical engineering. His research interests include DC-AC converter control and power electronics used in renewable energy generation.
Supported by:
* National Natural Science Foundation of China(51677054) and the 16th Six Talent Peaks Project in Jiangsu Province (2019-TD-XNY-001).

摘要/Abstract

Abstract: In recent years, next-generation power semiconductor devices, represented by silicon carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap (WBG) devices have better electrical characteristics than those of silicon (Si) based devices, they have attracted increased attention both from academic researchers and industrial engineers. Employing WBG devices will further improve the efficiency and power density of power converters. However, the current price of WBG devices remains extremely high. Thus, some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost. To summarize the current research on WBG/Si hybrid applications, the issues mentioned above with representative research approaches, results, and characteristics, are systematically reviewed. Finally, the current research on WBG/Si hybrid applications and their future trends are discussed.

Key words: Silicon carbide (SiC) devices, gallium nitride (GaN) devices, silicon (Si) devices, hybrid application

. [J]. 中国电气工程学报（英文）, 2021, 7(2): 1-20.

Li Zhang, Zhongshu Zheng, Xiutao Lou. A Review of WBG and Si Devices Hybrid Applications^*[J]. Chinese Journal of Electrical Engineering, 2021, 7(2): 1-20.

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