中国电气工程学报(英文) ›› 2020, Vol. 6 ›› Issue (3): 25-34.doi: 10.23919/CJEE.2020.000016
收稿日期:
2020-07-06
修回日期:
2020-08-03
接受日期:
2020-08-26
发布日期:
2020-10-14
Haidong Yan1,2, Peijie Liang1, Yunhui Mei3,4,*, Zhihong Feng5,*
Received:
2020-07-06
Revised:
2020-08-03
Accepted:
2020-08-26
Published:
2020-10-14
Contact:
* E-mail: yunhui@tju.edu.cn and ga917vv@163.com
About author:
Haidong Yan received a B.S. degree in engineering from Hebei University of Architecture and Civil Engineering, Zhangjiakou, China, in 2006, an M.S. degree in mechanical and electrical engineering from Guilin University of Electronic Technology, Guilin, China, in 2011, and a Ph.D. degree from Tianjin University, Tianjin, China, in 2019. He is currently an assistant research fellow with the Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology and the School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology. His current research interests include packaging technology and reliability for high-temperature power electronics.Supported by:
. [J]. 中国电气工程学报(英文), 2020, 6(3): 25-34.
Haidong Yan, Peijie Liang, Yunhui Mei, Zhihong Feng. Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices*[J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 25-34.
[1] Z Q Wang, X J Shi, L M Tolbert, et al.A high temperature silicon carbide MOSFET power module with integrated silicon-on-insulator-based gate drive. IEEE Transactions on Power Electronics, 2014, 30(3): 1432-1445. [2] S A Ikpe, J M Lauenstein, G A Carr, et al.Silicon-carbide power MOSFET performance in high efficiency boost power processing unit for extreme environments.National Aeronautics and Space Administration, 2016: 184-189. [3] W Janke.The advantages and limitations of silicon carbide power devices.Przeglad Elektrotechniczny, 2011, 87(11): 41-46. [4] J Li, I Yaqub, M Corfield, et al.Comparison of thermo-mechanical reliability of high-temperature bonding materials for attachment of SiC devices [5] D Berry, J Li, Y H Mei, et al.Packaging of high-temperature planar power modules interconnected by low-temperature sintering of nanosilver paste. [6] E Moller, A Bajwa, J Wilde, et al.Comparison of new die-attachment technologies for power electronic assemblies. [7] F F Song, P Lai.Effect of substrate material on thermal reliability of high-power electronic packaging device. [8] K Hase, G Lefranc, M Zellner, et al.A solder bumping interconnect technology for high-power devices. [9] F Zhu, H H Zhang, R F Guan, et al.Effects of temperature and strain rate on mechanical property of Sn96.5Ag3Cu0.5. [10] V R Manikam, K Y Cheong.Die attach materials for high temperature applications: A review. [11] H Bracht, S Eon, R Frieling, et al.Thermal conductivity of isotopically controlled silicon nanostructures. [12] J W Pomeroy, M Bernardoni, D C Dumka, et al.Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping. [13] M A Ras, D May, T Winkler1, et al. Thermal characterization of highly conductive die attach materials. [14] B S Passmore, A B Lostetter.A review of SiC power module packaging technologies: Attaches, interconnections, and advanced heat transfer. [15] E Higurashi, T Suga.Review of low-temperature bonding technologies and their application in optoelectronic devices [16] R K Schwarzbauer.Novel large area joining technique for improved power device performance. IEEE Transactions on Industry Applications, 1991, 27(1): 93-95. [17] X Long, W B Tang, W J Xia, et al.Porosity and young's modulus of pressure-less sintered silver nanoparticles. [18] K S Siow.Are sintered silver joints ready for use as interconnect material in microelectronic packaging? Journal of Electronic Materials, 2014, 43(4): 947-961. [19] J Bai, Z Zhang, J Calata, et al.Characterization of low-temperature sintered nanoscale silver paste for attaching semiconductor devices. [20] R Khazaka, L Mendizabal, D Henry.Review on joint shear strength of nano-silver paste and its long-term high temperature reliability. [21] G Q Lu, J N Calata, G Y Lei, et al.Low-temperature and pressureless sintering technology for high-performance and high-temperature interconnection of semiconductor devices. [22] A T Ahmed, M T Ayad, M T Sabah.Study and optimization of the mechanical properties of PVP/PVA polymer nanocomposite as a low temperature adhesive in nano-joining. IOP Conference Series: Materials Science and Engineering, 2020, 671: 012145. [23] C T Chen, K Suganuma.Microstructure and mechanical properties of sintered Ag particles with flake and spherical shape from nano to micro size. Materials & Design, 2018, 162: 311-321. [24] W Liu, Y H Mei, Y J Xie, et al.Design and characterizations of a planar multi-chip half-bridge power module by pressureless sintering of nanosilver paste. [25] H D Yan, Y H Mei, G Q Lu, et al.Pressureless sintering multi-scale Ag paste by a commercial vacuum reflowing furnace for massive production of power modules. [26] P Paret, J Major, D Devoto, et al.Mechanical characterization study of sintered silver pastes. [27] J Kahler, N Heuck, G Palm, et al.Low-pressure sintering of silver micro- and nanoparticles for a high temperature stable pick & place die attach. [28] L A Navarro, M Vellvehi, X Jordàet, et al.Silver nano-particles sintering process for the die-attach of power devices for high temperature applications.Ingeniería Mecánica, Tecnología y Desarrollo, 2012, 4(3): 97-102. [29] W S Hong, M S Kim, K K Hong, et al.Pressureless silver sintering of silicon-carbide power modules for electric vehicles. [30] C Gobl, J Faltenbacher.Low temperature sinter technology die attachment for power electronic applications. [31] K S Tan, Y H Wong, K Y Cheong, et al.Thermal characteristic of sintered AgeCu nanopaste for high-temperature die-attach application. [32] K S Siow.Die-attach materials for high temperature applications in microelectronics packaging. Berlin: Springer, 2018. [33] Z Y Zhang, G Q Lu.Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow. [34] Y Liu, H Zhang, L Wang, et al.Stress analysis of pressure-assisted sintering for the double-side assembly of power module. [35] Y Liu, H Zhang, L Fan, et al.Effect of sintering pressure on the porosity and the shear strength of the pressure-assisted silver sintering bonding. IEEE Transactions on Device and Material Reliability, 2018, 18(2): 240-246. [36] S A Paknejad, S H Mannan.Review of silver nanoparticle based die attach materials for high power/temperature applications [37] W Liu, R An, C Q Wang, et al.Recent progress in rapid sintering of nanosilver for electronics applications. [38] M Koelink.Ag-sintering as an enabler for thermally demanding electronic and semiconductor applications. [39] K S Siow, Y T Lin.Identifying the development state of sintered silver (Ag) as a bonding material in the microelectronic packaging via patent landscape study.Journal of Electronic Packaging, 2016, 138(2): 1-18. [40] S Kraft, S Zischler, A Schletz.Properties of a novel silver sintering die attach material for high temperature-high lifetime applications. [41] N Heuck, G Palm, A Bakin. SiC-die-attachment for high temperature applications. Materials Science Forum,2010, 645-648: 741-744. [42] H Nishikawa, X D Liu, X F Wang, et al.Microscale Ag particle paste for sintered joints in high-power devices. [43] S Y Zhao, X Li, Y H Mei.Study on high temperature bonding reliability of sintered nano-silver joint on bare copper plate. [44] S Wang, H J Ji, M Li, et al.Fabrication of interconnects using pressureless low temperature sintered Ag nanoparticles.Materials Letters, 2012, 85: 61-63. [45] T Iwashige, T Endo, K Sugiurs, et al.CoW metallization for high strength bonding to both sintered Ag joints and encapsulation resins. [46] K Kielbasinski, J Szalapak, M Teodorczyk, et al.Influence of nanoparticles content in silver paste on mechanical and electrical properties of LTJT joints. [47] A D Albert, M F Becker, J W Keto, et al.Low temperature, pressure-assisted sintering of nanoparticulate silver films. [48] F Yu, W R Johnson, M Hamilton, et al. Low temperature, fast sintering of micro-scale silver paste for die attach for 300 ℃ applications. IMAPS2015 Orlando - 48th Annual International Symposium on Microelectronics, October 26-29, 2015. [49] H Q Zhang, H L Bai, P Peng, et al.SiC chip attachment sintered by nanosilver paste and their shear strength evaluation.Welding in the World, 2019, 63: 1055-1063. [50] M H Roh, H Nishikawa, S Tsutsumi, et al.Low temperature bonding with high shear strength using micro-sized Ag particle paste for power electronic packaging. [51] J Stegerl.A new generation of power modules with sinter-technology for the automotive industry. [52] T Stockmeier, P Beckedahl, C Gobl, et al.SKiN: Double side sintering technology for new packages. [53] L M Chew, W Schmitt, M Dubis, et al.Micro-silver sinter paste developed for pressure sintering on bare Cu surfaces under air or inert atmosphere. [54] F L Henaff, G Greca, P Salerno, et al.Double side sintered IGBT+FRD, 650 V/ 200 A, in a STO247 package for high performance automotive applications. [55] F R Henaff, G Greca, P Salerno, et al.Reliability of double side silver Sintered devices with various substrate metallization. [56] J Felba.Technological aspects of silver particle sintering for electronic packaging. [57] H D Yan, S C Fu, Y H Mei.Double-sided joining IGBT devices by pressureless sintering of nanosilver paste. [58] G Q Lu, Y H Mei, M Y Wang, et al. Low-temperature silver sintering for bonding 3D power modules. LTB-3D2019, May 2019, Japan. DOI: 10.23919/LTB-3D.2019.8735123. [59] G Y Tang, L C Wai, T G Lim, et al.Development of high power and high junction temperature SiC based power packages. [60] Yan H D, Y H Mei, X Li, et al. A multichip phase-leg IGBT module using nanosilver paste by pressure-less sintering in formic acid atmosphere. [61] S T Feng, Y H Mei, G Chen, et al.Characterizations of rapid sintered nanosilver joint for attaching power chips.Materials, 2016, 9(7): 564. [62] Y Jung, D Ryu, M Gim, et al.Development of next generation flip chip interconnection technology using homogenized laser-assisted bonding. [63] R Roy, D Agrawal, J Cheng, et al.Full sintering of powdered-metal bodies in a microwave field. [64] Y J Xie, Y J Wang, Y H Mei, et al.Rapid sintering of nano-Ag paste at low current to bond large area(>100 mm2) power chips for electronics packaging. |
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