中国电气工程学报(英文) ›› 2020, Vol. 6 ›› Issue (3): 25-34.doi: 10.23919/CJEE.2020.000016

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  • 收稿日期:2020-07-06 修回日期:2020-08-03 接受日期:2020-08-26 发布日期:2020-10-14

Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices*

Haidong Yan1,2, Peijie Liang1, Yunhui Mei3,4,*, Zhihong Feng5,*   

  1. 1. School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China;
    2. Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology, Guilin 541004, China;
    3. School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China;
    4. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Guilin 541004, China;
    5. National Key Lab of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • Received:2020-07-06 Revised:2020-08-03 Accepted:2020-08-26 Published:2020-10-14
  • Contact: * E-mail: yunhui@tju.edu.cn and ga917vv@163.com
  • About author:Haidong Yan received a B.S. degree in engineering from Hebei University of Architecture and Civil Engineering, Zhangjiakou, China, in 2006, an M.S. degree in mechanical and electrical engineering from Guilin University of Electronic Technology, Guilin, China, in 2011, and a Ph.D. degree from Tianjin University, Tianjin, China, in 2019. He is currently an assistant research fellow with the Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology and the School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology. His current research interests include packaging technology and reliability for high-temperature power electronics.
    Peijie Liang received a B.S. degree in mechanical engineering from Shenyang Ligong University, Shenyang, China, in 2019. He is currently working towards M.S. degree at the School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, China.
    Yunhui Mei received his B.S. and Ph.D. degrees in process equipment and controlling engineering from Tianjin University, Tianjin, China, in 2006 and 2010, respectively. He studied at the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, USA. He is currently an associate professor with the Tianjin Key Laboratory of Advanced Joining Technology and School of Material Science and Engineering, Tianjin University. He has published more than 60 papers on power electronic packaging. His current research interests include high-temperature packaging and materials for high-power-density applications.
    Zhihong Feng received a Ph. D degree in electrical and electronics engineering from The Hong Kong University of Science and Technology, Hong Kong, China. He is currently the chief expert of China Electronic Technology Corporation (CETC), assistant chief engineer of No. 13 Research Institute of China Electronics Technology Group Corp, and a researcher of State Key Laboratory of ASIC and system. His current research interests include wide bandgap semiconductor materials and electronic devices, terahertz solid-state electronic technology, and other advanced semiconductor materials and equipment.
  • Supported by:
    *National Natural Science Foundation of China (51967005), Guangxi Natural Science Foundation (2018GXNSFAA294082) and Director Fund Project of Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology (19-050-44-006Z).

Abstract: Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics. Excellent thermal conductivity, high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices, specifically SiC devices. The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale, micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented. The emerging rapid sintering approaches, such as the electric-assisted approach, are briefly introduced and the technical outlook is provided. In addition, the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

Key words: Pressure-less sintering, pressure-assisted, nanosilver paste, high-temperature power module, insulated gate bipolar translators (IGBT), silicon carbide (SiC)