Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents*

doi:10.23919/CJEE.2020.000014

中国电气工程学报（英文） ›› 2020, Vol. 6 ›› Issue (3): 1-7.doi: 10.23919/CJEE.2020.000014

• • 下一篇

收稿日期:2020-07-22 修回日期:2020-08-12 接受日期:2020-08-26 发布日期:2020-10-14

Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents^*

Dan Zheng¹, Yuhui Kang¹, Han Cao^1,2, Xiaoguang Chai^1,2, Tao Fan^1,2, Puqi Ning^1,2,*

1. Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-07-22 Revised:2020-08-12 Accepted:2020-08-26 Published:2020-10-14
Contact: * E-mail: npq@mail.iee.ac.cn
Supported by:
*National Key Research and Development Program of China (2016YFB0100600) and the Key Program of Bureau of Frontier Sciences and Education, Chinese Academy of Sciences (QYZDBSSW-JSC044).

摘要/Abstract

Abstract: A junction temperature monitoring method has been presented based on the on-state voltage at high currents. With a simplified physical model, this method mapped the relationship between junction temperature and on-state voltage. The tough calibration and signal sensing issues are solved. Verified by body-diode voltage detecting method, the presented method shows a good performance and high accuracy, in the meantime, it would not change the modulation strategy and topology of the converter.

Key words: Junction temperature monitoring, SiC MOSFET, conduction voltage

. [J]. 中国电气工程学报（英文）, 2020, 6(3): 1-7.

Dan Zheng, Yuhui Kang, Han Cao, Xiaoguang Chai, Tao Fan, Puqi Ning. Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents^*[J]. Chinese Journal of Electrical Engineering, 2020, 6(3): 1-7.

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Monitoring of SiC MOSFET Junction Temperature with On-state Voltage at High Currents^*

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